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Product Description
The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
VD= 5.1 V, ID= 75 mA (Typ.)
SGA-6489 SGA-6489Z
Pb
RoHS Compliant & Green Package
DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
Product Features * Now available in Lead Free, RoHS
Compliant, & Green Packaging * High Gain : 17.5 dB at 1950 MHz * Cascadable 50 Ohm * Operates From Single Supply * Low Thermal Resistance Package
24
GAIN
0
Gain (dB)
ORL
Return Loss (dB)
18
-10
Applications
* PA Driver Amplifier
12
IRL
-20
6
-30
* Cellular, PCS, GSM, UMTS * IF Amplifier * Wireless Data, Satellite
0 0 1 2 3 Frequency (GHz) 4 5
-40
Symbol G
Parameter Small Signal Gain
Units dB
Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz
Min. 18.4
Typ. 20.1 17.5 16.5 20.7 18.7 34.0 32.0 3500
Max. 22.4
P1dB OIP3
Output Pow er at 1dB Compression Output Third Order Intercept Point
dBm dBm MHz dB dB dB V mA C/W
Bandw idth Determined by Return Loss (>10dB)
IRL ORL NF VD ID RTH, j-l
Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
VS = 8 V RBIAS = 39 Ohms
1950 MHz 1950 MHz 1950 MHz 4.7 67
14.4 10.9 3.0 5.1 75 97 5.5 83
Test Conditions:
ID = 75 mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100621 Rev. F
SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol Parameter Unit 100 500
Frequency Frequency (MHz) Frequency (MHz)(MHz) 850 1950
2400
3500
G OIP3 P1dB IRL ORL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
dB dBm dBm dB dB dB dB
21.0 35.0 20.6 29.4 18.7 23.9 3.2
20.8 34.5 20.9 30.8 16.3 23.8 2.8
20.1 34.0 20.7 24.7 14.6 23.9 2.7
17.5 32.0 18.7 14.4 10.9 22.2 3.0
16.5 30.1 17.4 12.5 10.9 21.4 3.4
14.0 25.0 14.0 10.8 10.0 19.3 4.4
VS = 8 V Test Conditions: VS = 8 V Test Conditions: RBIAS = 39 Ohms RBIAS = 39 Ohms
= 75 mA Typ. IID = 80 mA Typ. D T = 25C TLL = 25C
OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms
Absolute Maximum Ratings Noise Figure vs. Frequency
VD=5.1 V, ID= 75 mA
5 Noise Figure (dB) 4 3 2 1 0 0 1 2 Frequency (GHz) 3 4
Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ)
Operati ng T mp. Range (TL) e
Absolute Limit
150 mA
7V +18 dBm
+150C -40C to +85C +150C
Max. Storage Temp.
TL=+25C
Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l T ke i nto account out of band VSWR presented by devi ces a such as SAW fi lters to determi ne maxi mum RF i nput power. Reflected harmoni c levels i n saturati on are si gni fi cant.
OIP3 vs. Frequency
VD= 5.1 V, ID= 75 mA
40 36 OIP3(dBm) 32 28
+25C
P1dB vs. Frequency
VD= 5.1 V, ID= 75 mA
22 20 P1dB(dBm) 18 16
+25C
24 20 0.0 0.5
TL
-40C +85C
14 12
TL
0.0 0.5 1.0
-40C +85C
1.0
1.5
2.0
2.5
3.0
3.5
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100621 Rev. F
SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier
Preliminary
|S | vs. Frequency
21
|S | vs. Frequency
11
24 18 |S21| (dB)
VD= 5.1 V, ID= 75 mA
0 -10 |S11| (dB)
VD= 5.1 V, ID= 75 mA
12 6
-20 -30
TL
0 0 1 2 3 4 Frequency (GHz) 5
+25C -40C +85C
TL
-40
6
+25C -40C +85C
0
1
2 3 Frequency (GHz)
4
5
|S | vs. Frequency
12
|S | vs. Frequency
22
-12 -15 -18 -21 -24 -27 0 1
VD= 5.1 V, ID= 75 mA
0 -10 |S22| (dB)
VD= 5.1 V, ID= 75 mA
|S12| (dB)
-20 -30
TL
2 3 Frequency (GHz) 4
+25C -40C +85C
TL
-40
5
+25C -40C +85C
0
1
2 3 Frequency (GHz)
4
5
VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 ohms *
90 85 80 ID(mA) 75 70 65 60 4.7 4.9 5.1 VD(Volts) 5.3 5.5
+25C +85C
VD vs. Temperature for Constant ID = 75 mA
5.7 5.5 VD(Volts) 5.3 5.1 4.9 4.7 -40 -15 10 35 Temperature(C) 60 85
-40C
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100621 Rev. F
SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R BIAS
1 uF 1000 pF
Application Circuit Element Values
Frequency (Mhz) Reference Designator 500 850 1950 2400 3500
VS
CD LC
CB CD LC
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
39 pF 15 pF 15 nH
RF in CB
4 1 SGA-6489 3 2 CB
RF out
Recommended Bias Resistor Values for ID=75mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 12 8V 39 10 V 62 12 V 91
VS
RBIAS
Note: RBIAS provides DC bias stability over temperature.
1 uF 1000 pF Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
A64
LC
CD CB
CB
Pin # Function
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance.
Part Identification Marking 4 4
1 RF IN
A64
2
A64Z
3
2, 4
3
GND
1
2
3
1
1
2
2
3
1
3
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number
Reel Size
Devices/Reel
See Application Note AN-075 for Package Outline Drawing
SGA-6489 SGA-6489Z
13" 13"
3000 3000
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-100621 Rev. F

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